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Advance Product Information
September 21, 2005
33 - 47 GHz Wide Band Driver Amplifier
Key Features
* * * * * * * * *
TGA4522
Frequency Range: 33 - 47 GHz 27.5 dBm Nominal Psat @ 38GHz 27 dBm P1dB @ 38 GHz 36 dBm OTOI @ Pin = 19 dBm/Tone 18 dB Nominal Gain @ 38GHz 15 dB Nominal Return Loss @ 38GHz Bias: 6 V @ 400 mA Idq 0.15 um 3MI pHEMT Technology Chip Dimensions 2.00 x 1.45 x 0.10 mm (0.079 x 0.057 x 0.004 in)
Primary Applications
* * * * Digital Radio Point-to-Point Radio Point-to-Multipoint Communications Military SAT-COM
Product Description
S-parameters (dB)
The TriQuint TGA4522 is a compact Driver Amplifier MMIC for Ka-band and Q-band applications. The part is designed using TriQuint's 0.15um power pHEMT production process. The TGA4522 nominally provides 27.5 dBm saturated output power, and 27 dBm output power at 1dB Gain compression @ 38 GHz. It also has typical gain of 18 dB, and return loss of 15 dB. The part is ideally suited for low cost emerging markets such as Digital Radio, Point-to-Point Radio and Point-to-Multi Point Communications. The TGA4522 is 100% DC and RF tested on-wafer to ensure performance compliance. Lead-Free & RoHS compliant.
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA
25 20 15 10 5 0 -5 -10 -15 -20 -25 32
30 29 28 27 26 25 24 23 22 32
Gain
ORL
34 36
IRL
38 40 42 44 Frequency (GHz)
46
48
Psat P1dB
Pout (dBm)
34
36
38
40
42
44
46
48
Frequency (GHz)
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice 1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 21, 2005
TGA4522
TABLE I MAXIMUM RATINGS 1/ SYMBOL
Vd Vg Id Ig PIN PD TCH TM TSTG 1/ 2/ 3/ 4/
PARAMETER
Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
VALUE
8V -2 TO 0 V 700 mA 16 mA 23 dBm See note 4/ 150 C 320 C -65 to 150 0C
0 0
NOTES
2/
2/ 3/ 3/
2/ 5/ 6/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Total current for the entire MMIC. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 0C - TBASE 0C) / 35.5 (0C/W) Where TBASE is the base plate temperature.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET.
6/
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 21, 2005
TGA4522
TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal)
PARAMETER
Frequency Range Drain Voltage, Vd Drain Current, Id Gate Voltage, Vg Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Output Power @ 1dB Gain Compression, P1dB Saturated Power, Psat OTOI @ 19dBm/Tone
TYPICAL
33 - 47 6.0 400 -0.6 18 15 15 26 27 36
UNITS
GHz V mA V dB dB dB dBm dBm dBm
TABLE III THERMAL INFORMATION
PARAMETER TEST CONDITIONS Vd = 6 V Idq = 400 mA Pdiss = 2.4 W TCH O ( C) 144 RTJC (qC/W) 30.8 TM (HRS) 1.7E+6
RJC Thermal Resistance (channel to Case)
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 21, 2005
Measured Data
20 18 16 14 Gain (dB) 12 10 8 6 4 2 0 30 32 34 36 38 40 42 44 46 48
Bias Conditions: Vd = 5-6 V, Idq = 400 mA
TGA4522
5V
6V
50
Frequency (GHz )
Bias Conditions: Vd = 6 V, Idq = 400 mA
20 15 10 5 Return Loss (dB) 0 -5 -10 -15 -20 -25 -30 30 32 34 36 38 40 42 44 46 48 50
IRL
ORL
Frequency (GHz)
4
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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September 21, 2005
Measured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA
TGA4522
30
6V
Output Power @ 1dB Gain Compression (dBm)
29 28 27 26 25 24 23 22 21 20 32 34 36 38 40 42 44 46
5V
48
Fre que ncy (GHz)
30
6V
29 Saturated Output Power (dBm) 28 27 26 25 24 23 22 21 20 32 34 36 38 40 42 44 46
5V
48
Fre que ncy (GHz)
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 21, 2005
Measured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA
TGA4522
40 30
600
Pout Gain Ids
28 39 26 38 24 OutputOTOI (dBm) ) Power (dBm 22 37 20 36 18 16 35 14 34 12
33 10
Freq = 35 GHz
575 550 525 500 Ids (m A)
Ids (mA)
6
475 450 425 400 375 350 325
34 -8
8 32 6
-6
35
-4
36 -2
0
37 38 39 2 4 6 8 10 Frequency (GHz) Pin (dBm )
40 12
41 14 16
300 42 18
30 28 26 24 Output Power (dBm) 22 20 18 16 14 12 10 8 6 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 Pin (dBm)
Pout Gain Ids
600
Freq = 40 GHz
575 550 525 500 475 450 425 400 375 350 325 300
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 21, 2005
Measured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA,
TGA4522
f=10MHz @ 19dBm/Tone
40 39 38 37 OTOI (dBm) 36 35 34 33 32 31 30 35 36 37 38 Frequency (GHz) 39 40 41
40 39 38 37 OTOI (dBm) 36 35 34 33 32 31 30 10 12 14 16 18 20 22 24
7
37GHz 38GHz 39GHz 40GHz
Output Power / Tone (dBm)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 21, 2005
Measured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA,
TGA4522
f=10MHz @ 19dBm/Tone
-30 -31 -32 -33 IM D3 (dBc) -34 -35 -36 -37 -38 -39 -40 35 36 37 38 Frequency (GHz) 39 40 41
0 -5 -10 -15 IMD3 (dBc) -20 -25 -30 -35 -40 -45 -50 10 12 14 16 18 20 22 24
8
37GHz 38GHz 39GHz 40GHz
Output Pow er / Tone (dBm)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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September 21, 2005
TGA4522
Mechanical Drawing
0.108 (0.004) 0.261 (0.010) 0.391 (0.015) 0.530 (0.021) 1.352 (0.053) 1.500 (0.059) 1.670 (0.066)
1.450 (0.057) 1.351 (0.053)
2
3
4
5
6
7
1.351 (0.053)
8
1.071 (0.042)
0.398 (0.016)
1
0.129 (0.005) 0.099 (0.004) 0
13
12
11
10
9
R C
B
R C
B
0
0.391 (0.015)
0.530 (0.021)
1.352 (0.053)
1.500 (0.059)
1.670 (0.066)
1.893 (0.075)
2.000 (0.079)
Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) GND is back side of MMIC Bond pad #1 Bond pad #2 Bond pad #3, 13 Bond pad #4, 5, 7, 9, 11, 12 Bond pad #6, 10 Bond pad #8 (RF In) (N/C) (Vg) (Vd) (N/C) (RF Out) 0.100 x 0.150 0.100 x 0.108 0.108 x 0.108 0.108 x 0.108 0.091 x 0.084 0.100 x 0.150 (0.004 x 0.006) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.003) (0.004 x 0.006)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
9
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 21, 2005
TGA4522
Recommended Chip Assembly Diagram
Vd
0.01 F
Vg
0.01 F 15 1.0 F
100pF 100pF 100pF
15 1.0 F
TFN (10mil Alumina)
Wedge bonds or ribbons
TFN (10mil Alumina)
Vg
0.01 F 15 1.0 F
100pF 100pF 100pF
Vd
0.01 F 15 1.0 F
To reduce these components (0.01 F, 15 , 1.0 F) connect: Vg @ bottom to Vg @ top Vd @ bottom to Vd @ top Bias Conditions: Vd = 6 V Vg = ~ -0.6 V to get 400mA Id
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
10
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 21, 2005
TGA4522 Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
0
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
11
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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